advanced power n-channel mosfet with schottky electronics corp. diode simple drive requirement bv dss 30v good recovery time r ds(on) 13.5m ? fast switching performance i d 11a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a v ka v i f @t a =25 a i fm a p d @t a =25 w w t stg t j symbol value unit rthj-a 50 /w rthj-a 60 /w data and specifications subject to change without notice 200910296 rohs-compliant product 1 30 + 20 11 maximum thermal resistance, junction-ambient 3 (schottky) parameter AP4810GSM rating drain-source voltage gate-source voltage continuous drain current 3 continuous drain current 3 9.3 pulsed drain current 1 50 maximum thermal resistance, junction-ambient 3 (mosfet) schottky reverse voltage 30 continous forward current 1 thermal data pulsed diode forward current 25 -55 to 150 operating junction temperature range -55 to 150 max power dissipation (schottky) 2.0 storage temperature range parameter max power dissipation (mosfet) 2.5 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the so-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. s s s g d d d d so-8 g d s schottky diode
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =10a - - 13.5 m ? v gs =4.5v, i d =5a - - 20 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =11a - 18 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 100 ua drain-source leakage current (t j =70 o c) v ds =24v, v gs =0v - - 1 ma i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =10a - 14 22.5 nc q gs gate-source charge v ds =15v - 3.2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 8.4 - nc t d(on) turn-on delay time 2 v ds =15v - 9 - ns t r rise time i d =1a - 6 - ns t d(off) turn-off delay time r g =3.3 ? ,v gs =10v - 27 - ns t f fall time r d =15 ? -8- ns c iss input capacitance v gs =0v - 1010 1200 pf c oss output capacitance v ds =25v - 200 - pf c rss reverse transfer capacitance f=1.0mhz - 170 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd diode+schottky forward on voltage 2 i s =1.0a, v gs =0v - 0.48 0.5 v i s 5a t rr body diode+schottky reverse recovery time i s =10a, v gs =0 v , - 21 - ns q rr body diode+schottky reverse recovery charge di/dt=100a/s - 13 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10 sec. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 max body-diode+schottky continous current AP4810GSM
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 AP4810GSM 0 10 20 30 40 50 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7 .0v 5.0v 4.5v v g =3.0v 0 10 20 30 40 50 0123 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 5.0v 4.5v v g =3.0v t a = 150 o c 8 10 12 14 16 18 20 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =5a t a =25 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =10a v g =10v 0.50 0.75 1.00 1.25 1.50 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =125 o c mosfet+schottky
AP4810GSM fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 q v g 4.5v q gs q gd q g charge 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 12 14 0 10203040 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =15v v ds =20v v ds =25v i d =10a 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 125 /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms 1s dc t a =25 o c single pulse 0 10 20 30 40 50 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
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